Positron annihilation at paramagnetic defects in semiconductors

M. Alatalo*, M. J. Puska, R. M. Nieminen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

Positron annihilation at vacancies in semiconductors is studied. The authors are interested in the formation of singlet and triplet positron-electron states, and especially, in their influence on the positron annihilation characteristics. These states are formed by a positron trapped by the vacancy and an unpaired (paramagnetic) electron in a deep level. They provide examples by determining the two ensuing positron lifetime components for vacancies in Si and GaAs. For the practical calculations it is shown how the self-consistent electron structures obtained by the pseudopotential-plane wave methods can be used. Finally, the implications are discussed from the experimental point of view.

Original languageEnglish
Article number002
Pages (from-to)L307-L314
Number of pages8
JournalJournal of physics: Condensed matter
Volume5
Issue number22
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

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