TY - JOUR
T1 - Poly(ionic liquid) dielectric for high performing P- and N-type single walled carbon nanotube transistors
AU - Tousignant, Mathieu N.
AU - Ourabi, May
AU - Niskanen, Jukka
AU - Mirka, Brendan
AU - Bodnaryk, William J.
AU - Adronov, Alex
AU - Lessard, Benoît H.
N1 - Funding Information:
This work was supported by the NSERC Green Electronics Network (GreEN) (Grant No. NETGP 508526-17 to B H L), NSERC Discovery Grant (RGPIN-2020-04079 to B H L) and NSERC CGS to M T.
Publisher Copyright:
© 2022 The Author(s). Published by IOP Publishing Ltd.
PY - 2022/9/1
Y1 - 2022/9/1
N2 - There is an increasing demand for low-cost and high-performance electronics which has stimulated a need for new high-performance dielectric materials. We have developed a facile synthesis of poly(2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide-ran-methyl methacrylate) (P(METATFSI-MMA)), a polymeric ionic liquid that can be used as a high-performance dielectric for semiconducting single walled carbon nanotube (SWCNTs) thin film transistors (TFTs). The P(METATFSI-MMA) polymer was synthesized at both 35 and 62 mol% of 2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide and produced p- and n-type devices that functioned under ambient conditions. These TFTs were then used to study the impact of electrochemical doping on the performance of SWCNT TFTs when switching from n-type, where an electrical double layer is formed, to p-type, where the TFSI- anions are free to interact with the SWCNTs. The TFTs operating in p-type had higher current on/off ratios and a larger transconductance than those operating in n-type, which is characteristic of electrochemically doped transistors. Furthermore, we tested the impact of operating frequency on device performance and discovered that decreasing the operating frequency of the TFTs resulted in a decreased hysteresis. The decrease in hysteresis was also observed to be more significant for the 35 mol% polymer.
AB - There is an increasing demand for low-cost and high-performance electronics which has stimulated a need for new high-performance dielectric materials. We have developed a facile synthesis of poly(2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide-ran-methyl methacrylate) (P(METATFSI-MMA)), a polymeric ionic liquid that can be used as a high-performance dielectric for semiconducting single walled carbon nanotube (SWCNTs) thin film transistors (TFTs). The P(METATFSI-MMA) polymer was synthesized at both 35 and 62 mol% of 2-(methacryloyloxy)ethyl trimethylammonium bis(trifluoromethylsulfonyl)azanide and produced p- and n-type devices that functioned under ambient conditions. These TFTs were then used to study the impact of electrochemical doping on the performance of SWCNT TFTs when switching from n-type, where an electrical double layer is formed, to p-type, where the TFSI- anions are free to interact with the SWCNTs. The TFTs operating in p-type had higher current on/off ratios and a larger transconductance than those operating in n-type, which is characteristic of electrochemically doped transistors. Furthermore, we tested the impact of operating frequency on device performance and discovered that decreasing the operating frequency of the TFTs resulted in a decreased hysteresis. The decrease in hysteresis was also observed to be more significant for the 35 mol% polymer.
KW - poly(ionic liquid)
KW - polyelectrolyte
KW - polymer dielectric
KW - single walled carbon nanotubes
KW - thin film transistors
UR - http://www.scopus.com/inward/record.url?scp=85139848682&partnerID=8YFLogxK
U2 - 10.1088/2058-8585/ac928f
DO - 10.1088/2058-8585/ac928f
M3 - Article
AN - SCOPUS:85139848682
SN - 2058-8585
VL - 7
JO - Flexible and Printed Electronics
JF - Flexible and Printed Electronics
IS - 3
M1 - 034004
ER -