@article{1fdd7241b7184d04855cdf45315264e1,
title = "Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals",
keywords = "GaN, growth polarity, HVPE, GaN, growth polarity, HVPE, GaN, growth polarity, HVPE",
author = "F. Tuomisto and T. Suski and H. Teisseyre and M. Krysko and M. Leszczynski and B. Lucznik and I. Grzegory and S. Porowski and D. Wasik and A. Witowski and W. Gebicki and P. Hageman and K. Saarinen",
year = "2003",
month = nov,
doi = "10.1002/pssb.200303259",
language = "English",
volume = "240",
pages = "289--292",
journal = "PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS",
issn = "0370-1972",
publisher = "Wiley",
number = "2",
}