Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, K. Saarinen

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)289-292
Number of pages4
JournalPHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS
Volume240
Issue number2
DOIs
Publication statusPublished - Nov 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • growth polarity
  • HVPE

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