Point defects and p-type conductivity in Zn1-xMnxGeAs2

L. Kilanski; C. Rauch; F. Tuomisto; A. Podgórni; E. Dynowska; W. Dobrowolski; I.V. Fedorchenko; S.F. Marenkin

doi:10.1063/1.4887118

Point defects and p-type conductivity in Zn_1-xMn_xGeAs₂

L. Kilanski, C. Rauch, F. Tuomisto, A. Podgórni, E. Dynowska, W. Dobrowolski, I.V. Fedorchenko, S.F. Marenkin

Department of Applied Physics

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Abstract

Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.

Original language	English
Article number	023501
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Applied Physics
Volume	116
Issue number	2
DOIs	https://doi.org/10.1063/1.4887118
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

Keywords

chalcogenide
positron
p-type
vacancy

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10.1063/1.4887118

1%2E4887118Final published version, 589 KB

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@article{3f6665f9d36345389fcea1180942fdcd,

title = "Point defects and p-type conductivity in Zn1-xMnxGeAs2",

abstract = "Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.",

keywords = "chalcogenide, positron, p-type, vacancy, chalcogenide, positron, p-type, vacancy, chalcogenide, positron, p-type, vacancy",

author = "L. Kilanski and C. Rauch and F. Tuomisto and A. Podg{\'o}rni and E. Dynowska and W. Dobrowolski and I.V. Fedorchenko and S.F. Marenkin",

year = "2014",

doi = "10.1063/1.4887118",

language = "English",

volume = "116",

pages = "1--7",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Point defects and p-type conductivity in Zn1-xMnxGeAs2

AU - Kilanski, L.

AU - Rauch, C.

AU - Tuomisto, F.

AU - Podgórni, A.

AU - Dynowska, E.

AU - Dobrowolski, W.

AU - Fedorchenko, I.V.

AU - Marenkin, S.F.

PY - 2014

Y1 - 2014

N2 - Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.

AB - Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.

KW - chalcogenide

KW - positron

KW - p-type

KW - vacancy

KW - chalcogenide

KW - positron

KW - p-type

KW - vacancy

KW - chalcogenide

KW - positron

KW - p-type

KW - vacancy

U2 - 10.1063/1.4887118

DO - 10.1063/1.4887118

M3 - Article

SN - 0021-8979

VL - 116

SP - 1

EP - 7

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023501

ER -

Point defects and p-type conductivity in Zn1-xMnxGeAs2

Abstract

Keywords

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Point defects and p-type conductivity in Zn_1-xMn_xGeAs₂