Point defects and p-type conductivity in Zn1-xMnxGeAs2

L. Kilanski, C. Rauch, F. Tuomisto, A. Podgórni, E. Dynowska, W. Dobrowolski, I.V. Fedorchenko, S.F. Marenkin

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Abstract

Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.
Original languageEnglish
Article number023501
Pages (from-to)1-7
Number of pages7
JournalJournal of Applied Physics
Volume116
Issue number2
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • chalcogenide
  • positron
  • p-type
  • vacancy

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