Point defects and impurities in bulk GaN studied by positron annihilation spectroscopy

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

Original languageEnglish
Title of host publicationTechnology of Gallium Nitride Crystal Growth, vol 133, part 5
EditorsE.Meissner Eds.D.Ehrentraut
Place of PublicationBerlin
Pages295-316
Publication statusPublished - 2010
MoE publication typeA3 Part of a book or another research book

Keywords

  • bulk
  • GaN
  • HNP
  • HVPE
  • positron

Cite this

Tuomisto, F. (2010). Point defects and impurities in bulk GaN studied by positron annihilation spectroscopy. In E. M. Eds.D.Ehrentraut (Ed.), Technology of Gallium Nitride Crystal Growth, vol 133, part 5 (pp. 295-316). Berlin.