Point defect evolution in low-temperature MOCVD growth of InN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Aixtron SE
  • RWTH Aachen University

Details

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume209
Issue number1
Publication statusPublished - Jan 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • InN, MOCVD, positron annihilation, vacancies

ID: 796461