Point defect evolution in low-temperature MOCVD growth of InN

Christian Rauch, T. Öcal, C. Giesen, M. Heuken, F. Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume209
Issue number1
DOIs
Publication statusPublished - Jan 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • InN
  • MOCVD
  • positron annihilation
  • vacancies

Cite this