Point defect balance in epitaxial GaSb

N. Segercrantz, J. Slotte, I. Makkonen, J. Kujala, F. Tuomisto, Y. Song, S. Wang

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
Original languageEnglish
Article number082113
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume105
Issue number8
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • defect
  • GaSb
  • positron

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