Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

Hanchen Liu*, Toni Pasanen, Oskari Leiviskä, Joonas Isometsä, John Fung, Marko Yli-Koski, Mikko Miettinen, Pekka Laukkanen, Ville Vähänissi, Hele Savin

*Corresponding author for this work

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