Pion induced displacement damage in silicon devices

M. Huhtinen, P. Aarnio

Research output: Contribution to journal › Article › Scientific › peer-review

66 Citations (Scopus)

Original language	English
Pages (from-to)	580-582
Journal	Nuclear Instruments and Methods in Physics Research A
Volume	335
Publication status	Published - 1993
MoE publication type	A1 Journal article-refereed

Cite this

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title = "Pion induced displacement damage in silicon devices",

keywords = "pion, radiation damage, semiconductors, pion, radiation damage, semiconductors, pion, radiation damage, semiconductors",

author = "M. Huhtinen and P. Aarnio",

year = "1993",

language = "English",

volume = "335",

pages = "580--582",

journal = "NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT",

issn = "0168-9002",

publisher = "Elsevier",

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TY - JOUR

T1 - Pion induced displacement damage in silicon devices

AU - Huhtinen, M.

AU - Aarnio, P.

PY - 1993

Y1 - 1993

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KW - radiation damage

KW - semiconductors

KW - pion

KW - radiation damage

KW - semiconductors

KW - pion

KW - radiation damage

KW - semiconductors

M3 - Article

VL - 335

SP - 580

EP - 582

JO - NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

JF - NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

SN - 0168-9002

ER -