Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

  • Toufik Sadi
  • Oves Badami
  • Vihar Georgiev
  • Jie Ding
  • Asen Asenov

Research units

  • University of Glasgow
  • Taiyuan University of Technology

Abstract

Nowadays, resistive random-Access memories (RRAMs) are widely considered as the next generation of non-volatile memory devices. Here, we employ a physics-based multi-scale kinetic Monte Carlo simulator to study the microscopic transport properties and characteristics of promising RRAM devices based on transition metal oxides, specifically hafnium oxide (HfOx) based structures. The simulator handles self-consistently electronic charge and thermal transport in the three-dimensional (3D) space, allowing the realistic study of the dynamics of conductive filaments responsible for switching. By presenting insightful results, we argue that using a simulator of a 3D nature, accounting for self-consistent fields and self-heating, is necessary for understanding switching in RRAMs. As an example, we look into the unipolar operation mode, by showing how only the correct inclusion of self-heating allows the proper reconstruction of the switching behaviour. The simulation framework is well-suited for exploring the operation and reliability of RRAMs, providing a reliable computational tool for the optimization of existing device technologies and the path finding and development of new RRAM options.

Details

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
Publication statusPublished - 1 Sep 2019
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Udine, Italy
Duration: 4 Sep 20196 Sep 2019
Conference number: 24

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
Abbreviated titleSISPAD
CountryItaly
CityUdine
Period04/09/201906/09/2019

    Research areas

  • Kinetic Monte Carlo (KMC), multi-scale models, resistive random-Access memories (RRAMs), transport phenomena

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