Photoreflectance studies InGaAs/InP superlattices

V. M. Airaksinen*, H. K. Lipsanen, P. Ravila, T. Tuomi, P. A. Claxton

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

3 Citations (Scopus)

Abstract

Photoreflectance measurements of InGaAs/InP superlattices grown by solid source molecular beam epitaxy show a well resolved ground state exciton and some of the higher confined transitions in the quantum wells. Ground state splitting possibly due to one monolayer variations in the layer thicknesses is observed. Strong unconfined transitions below the InP band gap are due to arsenic doping of the barriers caused by small amounts of arsenic leakage from the evaporation sources during the epitaxy.

Original languageEnglish
Title of host publicationModulation Spectroscopy
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
Pages238-243
Number of pages6
DOIs
Publication statusPublished - 1 Aug 1990
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Modulation Spectroscopy - San Diego, United States
Duration: 19 Mar 199021 Mar 1990

Publication series

NameSPIE Proceedings
PublisherSPIE
Volume1286

Conference

ConferenceInternational Conference on Modulation Spectroscopy
CountryUnited States
CitySan Diego
Period19/03/199021/03/1990

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