@inproceedings{267a2556505f45b18ddcc08938f3e64e,
title = "Photoreflectance studies InGaAs/InP superlattices",
abstract = "Photoreflectance measurements of InGaAs/InP superlattices grown by solid source molecular beam epitaxy show a well resolved ground state exciton and some of the higher confined transitions in the quantum wells. Ground state splitting possibly due to one monolayer variations in the layer thicknesses is observed. Strong unconfined transitions below the InP band gap are due to arsenic doping of the barriers caused by small amounts of arsenic leakage from the evaporation sources during the epitaxy.",
author = "Airaksinen, {V. M.} and Lipsanen, {H. K.} and P. Ravila and T. Tuomi and Claxton, {P. A.}",
year = "1990",
month = aug,
day = "1",
doi = "10.1117/12.20851",
language = "English",
isbn = "0819403377",
series = "SPIE Proceedings",
publisher = "SPIE",
pages = "238--243",
editor = "Pollak, {Fred H.} and Manuel Cardona and Aspnes, {David E.}",
booktitle = "Modulation Spectroscopy",
note = "International Conference on Modulation Spectroscopy ; Conference date: 19-03-1990 Through 21-03-1990",
}