Photoreflectance spectra of a GaAs/GaAs and of an InGaAs/InP multiple quantum well structures grown with molecular beam epitaxy
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Abstract
Photoreflectance (PR) is a contactless form of electroreflectance in which the electromodulation is caused by the electron-hole pairs created by the modulating light. In particular, PR is becoming an important tool for studying semiconductor heterostructures. Franz-Keldysh oscillations are observed in the photoreflectance spectrum of a GaAs/GaAs structure. The surface field and the ionised dopant concentration are determined. In the photoreflectance spectra of a multiple quantum well structure InP transitions from the valence subbands into the conduction subbands are clearly resolved and energy levels are determined.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 173-177 |
| Number of pages | 5 |
| Journal | Acta Polytechnica Scandinavica, Electrical Engineering Series |
| Issue number | 64 |
| Publication status | Published - 1989 |
| MoE publication type | A1 Journal article-refereed |
ID: 5535128
