Photophysical and photochemical effects in ultrafast laser patterning of CVD graphene

Ivan Bobrinetskiy*, Aleksei Emelianov, Albert Nasibulin, Ivan Komarov, Nerea Otero, Pablo M. Romero

*Corresponding author for this work

Research output: Contribution to journalLetterScientificpeer-review

10 Citations (Scopus)

Abstract

The micro-scale patterns in graphene on Si/SiO2 substrate were fabricated using ultrashort 515 nm laser pulses. For both picosecond and femtosecond laser pulses two competitive processes, based on photo-thermal (ablation) and photochemical (oxidation/etching) effects, were observed. The laser-induced etching of graphene starts just below the threshold energy of graphene ablation: 1.7 nJ per 280 fs pulse and 2.7 mu J per 30 ps pulse. Whilst etching is not sensitive to thermal properties of graphene and provides uniform patterns, the ablation, in contrast, is highly affected by defects in the graphene structure like wrinkles and bilayer islands. The mechanisms of ultrafast laser interaction with graphene are discussed.

Original languageEnglish
Article numberARTN 41LT01
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume49
Issue number41
DOIs
Publication statusPublished - 19 Oct 2016
MoE publication typeA1 Journal article-refereed

Keywords

  • picosecond laser
  • femtosecond laser
  • single-layer graphene
  • wrinkle
  • bilayer island
  • two-photon oxidation
  • trapped water
  • RAMAN-SPECTROSCOPY
  • BILAYER GRAPHENE
  • GRAIN-BOUNDARIES
  • WATER
  • SUBSTRATE
  • FUNCTIONALIZATION
  • ABSORPTION
  • PICOSECOND
  • SCATTERING
  • TRANSPORT

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