Photon up-converting (Yb,Er)2O3 thin films by atomic layer deposition

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of Turku

Abstract

We report up-converting (Yb,Er)2O3 thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1nm for 40nm thick films. High-intensity near-infrared (NIR) to green and red two-photon up-conversion emission is obtained with 974nm excitation through an absorption by Yb3+, followed by a Yb3+-Er3+ energy transfer and emission from Er3+. The ALD technique promises to be excellent for producing up-converting films for many applications such as near-infrared radiation absorbing layers for solar cells and sensors in point-of-care biomedical diagnostics. Schematic picture of the ALD-grown (Yb,Er)2O3 thin film including the up-conversion emission spectra.

Details

Original languageEnglish
Article number1700076
Number of pages4
JournalPHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS
Volume11
Issue number6
Publication statusPublished - Jun 2017
MoE publication typeA1 Journal article-refereed

    Research areas

  • Atomic layer deposition, Luminescence, Thin film, Up-conversion

ID: 13368699