Photon up-converting (Yb,Er)2O3 thin films by atomic layer deposition

Minnea Tuomisto*, Zivile Giedraityte, Maarit Karppinen, Mika Lastusaari

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We report up-converting (Yb,Er)2O3 thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1nm for 40nm thick films. High-intensity near-infrared (NIR) to green and red two-photon up-conversion emission is obtained with 974nm excitation through an absorption by Yb3+, followed by a Yb3+-Er3+ energy transfer and emission from Er3+. The ALD technique promises to be excellent for producing up-converting films for many applications such as near-infrared radiation absorbing layers for solar cells and sensors in point-of-care biomedical diagnostics. Schematic picture of the ALD-grown (Yb,Er)2O3 thin film including the up-conversion emission spectra.

Original languageEnglish
Article number1700076
Number of pages4
JournalPHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS
Volume11
Issue number6
DOIs
Publication statusPublished - Jun 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • Atomic layer deposition
  • Luminescence
  • Thin film
  • Up-conversion

Fingerprint Dive into the research topics of 'Photon up-converting (Yb,Er)<sub>2</sub>O<sub>3</sub> thin films by atomic layer deposition'. Together they form a unique fingerprint.

Cite this