Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

Research output: Working paperProfessional

Standard

Photoluminescence study of strain induced GaInNAs/GaAs quantum dots. / Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.

2002. p. 227-230 (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

Research output: Working paperProfessional

Harvard

Koskenvaara, H, Hakkarainen, T, Lipsanen, H & Sopanen, M 2002 'Photoluminescence study of strain induced GaInNAs/GaAs quantum dots' The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002, pp. 227-230.

APA

Koskenvaara, H., Hakkarainen, T., Lipsanen, H., & Sopanen, M. (2002). Photoluminescence study of strain induced GaInNAs/GaAs quantum dots. (pp. 227-230). (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

Vancouver

Koskenvaara H, Hakkarainen T, Lipsanen H, Sopanen M. Photoluminescence study of strain induced GaInNAs/GaAs quantum dots. 2002, p. 227-230. (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

Author

Koskenvaara, H. ; Hakkarainen, T. ; Lipsanen, H. ; Sopanen, M. / Photoluminescence study of strain induced GaInNAs/GaAs quantum dots. 2002. pp. 227-230 (The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002).

Bibtex - Download

@techreport{1ca8b7b39b3f46069e0ddddd25625ed5,
title = "Photoluminescence study of strain induced GaInNAs/GaAs quantum dots",
keywords = "semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography",
author = "H. Koskenvaara and T. Hakkarainen and H. Lipsanen and M. Sopanen",
year = "2002",
language = "English",
series = "The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002",
pages = "227--230",
type = "WorkingPaper",

}

RIS - Download

TY - UNPB

T1 - Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

AU - Koskenvaara, H.

AU - Hakkarainen, T.

AU - Lipsanen, H.

AU - Sopanen, M.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

M3 - Working paper

T3 - The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002

SP - 227

EP - 230

BT - Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

ER -

ID: 4132257