Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

Research output: Working paperProfessional

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Original languageEnglish
Pages227-230
Publication statusPublished - 2002
MoE publication typeD4 Published development or research report or study

Publication series

NameThe 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002

    Research areas

  • semiconductors, synchrotron x-ray topography

ID: 4132257