Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

H. Koskenvaara, T. Hakkarainen, H. Lipsanen, M. Sopanen

    Research output: Working paperProfessional

    Original languageEnglish
    Pages227-230
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameThe 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002

    Keywords

    • semiconductors
    • synchrotron x-ray topography

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