Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

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Original languageEnglish
Pages (from-to)988-989
Number of pages2
JournalJournal of Crystal Growth
Volume145
Issue number1-4
Publication statusPublished - 2 Dec 1994
MoE publication typeA1 Journal article-refereed

    Research areas

  • InGaAs, metal organic vapor, phase epitaxy, photoluminescence, quantum dots

ID: 4898092