Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

11 Citations (Scopus)

Original language	English
Title of host publication	8th International Conference on Metal Organic Vapour Phase Epitaxy, Cardiff, Wales, UK, 9-13 June 1996
Place of Publication	Cardiff, UK
Publication status	Published - 1996
MoE publication type	A4 Conference publication

Keywords

@inproceedings{14bec73f85c949f6a17cd05376c78b71,

title = "Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "K. Hjelt and T. Tuomi",

year = "1996",

language = "English",

booktitle = "8th International Conference on Metal Organic Vapour Phase Epitaxy, Cardiff, Wales, UK, 9-13 June 1996",

}

Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide. / Hjelt, K.; Tuomi, T.
8th International Conference on Metal Organic Vapour Phase Epitaxy, Cardiff, Wales, UK, 9-13 June 1996. Cardiff, UK, 1996.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide

AU - Hjelt, K.

AU - Tuomi, T.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Conference article in proceedings

BT - 8th International Conference on Metal Organic Vapour Phase Epitaxy, Cardiff, Wales, UK, 9-13 June 1996

CY - Cardiff, UK

ER -