Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide

Kari Hjelt, T. Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    11 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)794-798
    JournalJournal of Crystal Growth
    Volume170
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Keywords

    • optoelectronics
    • semiconductors

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