Photodegradation of surface passivated GaAs nanowires

P. A. Alekseev; A. N. Smirnov; V. Yu Davydov; Tuomas Haggrén; Harri Lipsanen; M. S. Dunaevskiy; V. L. Berkovits

doi:10.1088/1742-6596/1461/1/012002

Photodegradation of surface passivated GaAs nanowires

P. A. Alekseev, A. N. Smirnov, V. Yu Davydov, Tuomas Haggrén, Harri Lipsanen, M. S. Dunaevskiy, V. L. Berkovits

Ioffe Institute

Research output: Contribution to journal › Conference article › Scientific › peer-review

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Abstract

Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p⁺ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm², respectively.

Original language	English
Article number	012002
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	1461
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1461/1/012002
Publication status	Published - 23 Apr 2020
MoE publication type	A4 Conference publication
Event	International Conference on Metamaterials and Nanophotonics - St. Petersburg, Russian Federation Duration: 15 Jul 2019 → 19 Jul 2019 Conference number: 4

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title = "Photodegradation of surface passivated GaAs nanowires",

abstract = "Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.",

author = "Alekseev, {P. A.} and Smirnov, {A. N.} and Davydov, {V. Yu} and Tuomas Haggr{\'e}n and Harri Lipsanen and Dunaevskiy, {M. S.} and Berkovits, {V. L.}",

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doi = "10.1088/1742-6596/1461/1/012002",

language = "English",

volume = "1461",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

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note = "International Conference on Metamaterials and Nanophotonics, METANANO ; Conference date: 15-07-2019 Through 19-07-2019",

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TY - JOUR

T1 - Photodegradation of surface passivated GaAs nanowires

AU - Alekseev, P. A.

AU - Smirnov, A. N.

AU - Davydov, V. Yu

AU - Haggrén, Tuomas

AU - Lipsanen, Harri

AU - Dunaevskiy, M. S.

AU - Berkovits, V. L.

N1 - Conference code: 4

PY - 2020/4/23

Y1 - 2020/4/23

N2 - Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.

AB - Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.

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U2 - 10.1088/1742-6596/1461/1/012002

DO - 10.1088/1742-6596/1461/1/012002

M3 - Conference article

AN - SCOPUS:85084159605

SN - 1742-6588

VL - 1461

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012002

T2 - International Conference on Metamaterials and Nanophotonics

Y2 - 15 July 2019 through 19 July 2019

ER -

Photodegradation of surface passivated GaAs nanowires

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