Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etching

Xiaolong Liu*, Behrad Radfar, Kexun Chen, Olli Setälä, Toni Pasanen, Marko Yli-Koski, Hele Savin, Ville Vähänissi

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
26 Downloads (Pure)

Abstract

In semiconductor manufacturing, black silicon (bSi) has traditionally been considered as a sign of unsuccessful etching. However, after more careful consideration, many of its properties have turned out to be so superior that its integration into devices has become increasingly attractive. In devices where bSi covers the whole wafer surface, such as solar cells, the integration is already rather mature and different bSi fabrication technologies have been studied extensively. Regarding the integration into devices where bSi should cover only small selected areas, existing research focuses on device properties with one specific bSi fabrication method. Here, we fabricate bSi patterns with varying dimensions ranging from millimeters to micrometers using three common bSi fabrication techniques, i.e., plasma etching, metal-assisted chemical etching (MACE) and femtosecond-laser etching, and study the corresponding fabrication characteristics and resulting material properties. Our results show that plasma etching is the most suitable method in the case of µm-scale devices, while MACE reached surprisingly almost the same performance. Femtosecond-laser has potential due to its maskless nature and capability for hyperdoping, however, in this study its moderate accuracy, large silicon consumption and spreading of the etching damage outside the bSi region left room for improvement.
Original languageEnglish
Pages (from-to)504-510
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume35
Issue number3
DOIs
Publication statusPublished - Aug 2022
MoE publication typeA1 Journal article-refereed

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