P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Research output: Contribution to journalArticle


Research units

  • Massachusetts Institute of Technology
  • Virginia Polytechnic Institute and State University
  • Intel
  • Enkris Semiconductor


In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate. A major benefit of such epi-structure is that it contains both a 2-dimensional electron gas (2-DEG) and a 2-dimensional hole gas (2-DHG), hence making it suitable for the GaN-based complementary circuit implementation. In addition, the 2-DEG at the interface of the AlGaN/GaN heterostructure is depleted due to the p-GaN layer on top giving rise to normally- OFF operation for the n-channel transistors. A contact resistivity of 4.9 × 10-6Ω · cm2 is obtained for the ohmic contact to the hole channel for a p-GaN Mg concentration of 2 × 1020 cm-3. Long channel (Lg = 3 μm and Lsd = 9 μm) p-type transistors show an ON-OFF current ratio of ~105 and ON resistance of ~2.3 kΩ · mm at V GS = -11 V.


Original languageEnglish
Article number8713471
Pages (from-to)1036-1039
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 1 Jul 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • AlGaN, CMOS, GaN, MISFET, p-channel

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