Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermuller; A. Deisenrieder; G. Abstreiter; K. Karrai; S. Grosse; S. Manus; J. Feldmann; H. Lipsanen; M. Sopanen; J. Ahopelto

doi:10.1063/1.124116

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto

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Abstract

The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

Original language	English
Pages (from-to)	3200-3202
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	21
DOIs	https://doi.org/10.1063/1.124116
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Keywords

nanostructure
optical spectroscopy
quantum dot

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title = "Pauli-blocking imaging of single strain-induced semiconductor quantum dots",

abstract = "The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.",

keywords = "nanostructure, optical spectroscopy, quantum dot, nanostructure, optical spectroscopy, quantum dot, nanostructure, optical spectroscopy, quantum dot",

author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and S. Manus and J. Feldmann and H. Lipsanen and M. Sopanen and J. Ahopelto",

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doi = "10.1063/1.124116",

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T1 - Pauli-blocking imaging of single strain-induced semiconductor quantum dots

AU - Obermuller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, S.

AU - Feldmann, J.

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Ahopelto, J.

PY - 1999

Y1 - 1999

N2 - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

AB - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

KW - nanostructure

KW - optical spectroscopy

KW - quantum dot

KW - nanostructure

KW - optical spectroscopy

KW - quantum dot

KW - nanostructure

KW - optical spectroscopy

KW - quantum dot

U2 - 10.1063/1.124116

DO - 10.1063/1.124116

M3 - Article

VL - 74

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EP - 3202

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

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