Patterning of sapphire / GaN substrates

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Optogan GmbH
  • RAS - Ioffe Physico Technical Institute

Details

Original languageEnglish
Pages (from-to)1509-1512
Number of pages4
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume8
Issue number5
Publication statusPublished - May 2011
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaN, thin film, epitaxial growth, GaN/sapphire interface, patterning

ID: 854649