Passivation of GaAS surface by ultrathin epitaxial GaN layer

Juha Riikonen, Jaakko Sormunen, Hannu Koskenvaara, Marco Mattila, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    24 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)621-626
    Number of pages6
    JournalJournal of Crystal Growth
    Volume272
    Issue number1-4
    DOIs
    Publication statusPublished - 10 Dec 2004
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Metalorganic vapor phase epitaxy
    • Photoluminescence
    • Quantum wells
    • Semiconducting gallium compounds

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