Activities per year
Abstract
Silicon radiation and particle detectors are traditionally passivated with thermal silicon dioxide. It has been shown that aluminium oxide (Al2O3) films provide better surface passivation due to their high negative charge, but studies on Al2O3 surface passivation are usually performed on low‐resistivity substrates. In this article, the passivation of high‐resistivity, detector‐grade float‐zone silicon with Al2O3 is studied, with a specific emphasis on the effect of post‐anneal temperature on carrier lifetimes and film properties. It is confirmed that Al2O3 provides excellent surface passivation also on high‐resistivity FZ‐Si substrates, with a low interface defect density of around (2–4) × 1011 cm−2eV−1 and high negative oxide charge of 1 × 1012 to 3 × 1012 q cm−2, when post‐annealed at temperatures of up to 450–500 °C. In addition, high‐resistivity samples are studied for the phenomenon of bulk lifetime degradation occurring at typical post‐anneal or metal sintering temperatures, which has been reported for low‐resistivity FZ silicon. At post‐anneal temperatures of >500 °C, reduced bulk lifetimes are observed if the substrates did not receive high‐temperature treatment prior to surface passivation. Furthermore, it is noticed that n‐type samples exhibit lower bulk lifetimes even when a high‐temperature treatment was performed, which indicates a connection between FZ‐Si bulk lifetime degradation and doping type.
Original language | English |
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Number of pages | 8 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 216 |
Issue number | 17 |
Early online date | 11 Jul 2019 |
DOIs | |
Publication status | Published - Sep 2019 |
MoE publication type | A1 Journal article-refereed |
Keywords
- aluminum oxides
- charge carrier lifetimes
- detectors
- float-zone silicon
- surface passivation
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Equipment
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OtaNano - Nanofab
Päivikki Repo (Manager)
School of Electrical EngineeringFacility/equipment: Facility
Activities
- 1 Conference presentation
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Passivation of detector-grade Fz-Si with atomic layer deposited aluminium oxide
Toni Pasanen (Speaker), Jennifer Ott (Contributor), Päivikki Repo (Contributor), Heli Seppänen (Contributor), Ville Vähänissi (Contributor) & Hele Savin (Contributor)
23 Sep 2019Activity: Talk or presentation types › Conference presentation