Particle detectors made of high resistivity Czochralski grown silicon

J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen, K. Lassila-Perini, J. Nysten, Z. Li, V. Eremin, A. Ivanov, E. Verbitskaya, P. Heikkilä, V. Ovchinnikov, M. Yli-Koski, P. Laitinen, I. Riihimäki, A. Virtanen

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4 Citations (Scopus)

Abstract

We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Original languageEnglish
Pages (from-to)88-90
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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    Härkönen, J., Tuovinen, E., Luukka, P., Tuominen, E., Lassila-Perini, K., Nysten, J., ... Virtanen, A. (2004). Particle detectors made of high resistivity Czochralski grown silicon. Physica Scripta, T114, 88-90. https://doi.org/10.1088/0031-8949/2004/T114/021