Particle detectors made of high resistivity Czochralski grown silicon

J. Härkönen; E. Tuovinen; P. Luukka; E. Tuominen; K. Lassila-Perini; J. Nysten; Z. Li; V. Eremin; A. Ivanov; E. Verbitskaya; P. Heikkilä; V. Ovchinnikov; M. Yli-Koski; P. Laitinen; I. Riihimäki; A. Virtanen

doi:10.1088/0031-8949/2004/T114/021

Particle detectors made of high resistivity Czochralski grown silicon

J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen, K. Lassila-Perini, J. Nysten, Z. Li, V. Eremin, A. Ivanov, E. Verbitskaya, P. Heikkilä, V. Ovchinnikov, M. Yli-Koski, P. Laitinen, I. Riihimäki, A. Virtanen

Department of Electrical Engineering and Automation

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.

Original language	English
Pages (from-to)	88-90
Journal	Physica Scripta
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/021
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

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Härkönen, J., Tuovinen, E., Luukka, P., Tuominen, E., Lassila-Perini, K., Nysten, J., ... Virtanen, A. (2004). Particle detectors made of high resistivity Czochralski grown silicon. Physica Scripta, T114, 88-90. https://doi.org/10.1088/0031-8949/2004/T114/021

@article{4ecfbf813f744c74a1ceb60f6074c68a,

title = "Particle detectors made of high resistivity Czochralski grown silicon",

abstract = "We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.",

author = "J. H{\"a}rk{\"o}nen and E. Tuovinen and P. Luukka and E. Tuominen and K. Lassila-Perini and J. Nysten and Z. Li and V. Eremin and A. Ivanov and E. Verbitskaya and P. Heikkil{\"a} and V. Ovchinnikov and M. Yli-Koski and P. Laitinen and I. Riihim{\"a}ki and A. Virtanen",

year = "2004",

doi = "10.1088/0031-8949/2004/T114/021",

language = "English",

volume = "T114",

pages = "88--90",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "IOP Publishing Ltd.",

}

Härkönen, J, Tuovinen, E, Luukka, P, Tuominen, E, Lassila-Perini, K, Nysten, J, Li, Z, Eremin, V, Ivanov, A, Verbitskaya, E, Heikkilä, P, Ovchinnikov, V , Yli-Koski, M, Laitinen, P, Riihimäki, I & Virtanen, A 2004, 'Particle detectors made of high resistivity Czochralski grown silicon', Physica Scripta, vol. T114, pp. 88-90. https://doi.org/10.1088/0031-8949/2004/T114/021

Particle detectors made of high resistivity Czochralski grown silicon. / Härkönen, J.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Lassila-Perini, K.; Nysten, J.; Li, Z.; Eremin, V.; Ivanov, A.; Verbitskaya, E.; Heikkilä, P.; Ovchinnikov, V.; Yli-Koski, M.; Laitinen, P.; Riihimäki, I.; Virtanen, A.

In: Physica Scripta, Vol. T114, 2004, p. 88-90.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Particle detectors made of high resistivity Czochralski grown silicon

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Luukka, P.

AU - Tuominen, E.

AU - Lassila-Perini, K.

AU - Nysten, J.

AU - Li, Z.

AU - Eremin, V.

AU - Ivanov, A.

AU - Verbitskaya, E.

AU - Heikkilä, P.

AU - Ovchinnikov, V.

AU - Yli-Koski, M.

AU - Laitinen, P.

AU - Riihimäki, I.

AU - Virtanen, A.

PY - 2004

Y1 - 2004

N2 - We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.

AB - We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.

U2 - 10.1088/0031-8949/2004/T114/021

DO - 10.1088/0031-8949/2004/T114/021

M3 - Article

VL - T114

SP - 88

EP - 90

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -