Parity effect in Al and Nb single electron transistors in a tunable environment

Alexander Savin, Matthias Meschke, Jukka Pekola, Ya.A. Pashkin, T.F. Li, H. Im, J.S. Tsai

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
14 Downloads (Pure)

Abstract

Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e periodicity in a wide range of environmental impedances at bath temperatures below 340mK. Contrary to the results of the Al sample, the authors were not able to detect 2e periodicity under any conditions on similar samples with Nb island. The authors attribute this to the material properties of Nb.
Original languageEnglish
Article number063512
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • single electron transistor

Fingerprint Dive into the research topics of 'Parity effect in Al and Nb single electron transistors in a tunable environment'. Together they form a unique fingerprint.

  • Cite this