Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H. Willems van Beveren; Kuan Y. Tan; Nai-Shyan Lai; Oleh Klochan; Andrew S. Dzurak; Alex R. Hamilton

doi:10.4028/www.scientific.net/MSF.700.93

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H. Willems van Beveren^*
, Kuan Y. Tan
, Nai-Shyan Lai
, Oleh Klochan
, Andrew S. Dzurak
, Alex R. Hamilton

^*Corresponding author for this work

Not published at Aalto University

University of Melbourne

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

Original language	English
Title of host publication	ADVANCED MATERIALS AND NANOTECHNOLOGY
Editors	BJ Ruck, T Kemmitt
Publisher	Trans Tech Publications
Pages	93-95
Number of pages	3
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.700.93
Publication status	Published - 2012
MoE publication type	A4 Conference publication
Event	Conference on Advanced Materials and Nanotechnology - Wellington, New Zealand Duration: 7 Feb 2011 → 11 Feb 2011 Conference number: 5

Publication series

Name	Materials Science Forum
Publisher	TRANS TECH PUBLICATIONS LTD
Volume	700
ISSN (Print)	0255-5476

Conference

Conference	Conference on Advanced Materials and Nanotechnology
Abbreviated title	AMN
Country/Territory	New Zealand
City	Wellington
Period	07/02/2011 → 11/02/2011

Keywords

Hall bar
MOSFET
overlapping-gate
2DEG
e-beam lithography
Landau levels
EDGE STATES
SI-MOSFETS
QUANTUM
SCATTERING
TRANSPORT
SYSTEM

Access to Document

10.4028/www.scientific.net/MSF.700.93

Cite this

van Beveren, L. H. W., Tan, K. Y., Lai, N.-S., Klochan, O., Dzurak, A. S., & Hamilton, A. R. (2012). Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime. In BJ. Ruck, & T. Kemmitt (Eds.), ADVANCED MATERIALS AND NANOTECHNOLOGY (pp. 93-95). (Materials Science Forum; Vol. 700). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.700.93

@inproceedings{3c05d28e089a4045bc3ae88d44d43231,

title = "Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime",

abstract = "A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).",

keywords = "Hall bar, MOSFET, overlapping-gate, 2DEG, e-beam lithography, Landau levels, EDGE STATES, SI-MOSFETS, QUANTUM, SCATTERING, TRANSPORT, SYSTEM",

author = "\{van Beveren\}, \{Laurens H. Willems\} and Tan, \{Kuan Y.\} and Nai-Shyan Lai and Oleh Klochan and Dzurak, \{Andrew S.\} and Hamilton, \{Alex R.\}",

year = "2012",

doi = "10.4028/www.scientific.net/MSF.700.93",

language = "English",

series = "Materials Science Forum",

publisher = "Trans Tech Publications",

pages = "93--95",

editor = "BJ Ruck and T Kemmitt",

booktitle = "ADVANCED MATERIALS AND NANOTECHNOLOGY",

address = "Switzerland",

note = "Conference on Advanced Materials and Nanotechnology, AMN ; Conference date: 07-02-2011 Through 11-02-2011",

}

van Beveren, LHW, Tan, KY, Lai, N-S, Klochan, O, Dzurak, AS & Hamilton, AR 2012, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime. in BJ Ruck & T Kemmitt (eds), ADVANCED MATERIALS AND NANOTECHNOLOGY. Materials Science Forum, vol. 700, Trans Tech Publications, pp. 93-95, Conference on Advanced Materials and Nanotechnology, Wellington, New Zealand, 07/02/2011. https://doi.org/10.4028/www.scientific.net/MSF.700.93

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime. / van Beveren, Laurens H. Willems; Tan, Kuan Y.; Lai, Nai-Shyan et al.
ADVANCED MATERIALS AND NANOTECHNOLOGY. ed. / BJ Ruck; T Kemmitt. Trans Tech Publications, 2012. p. 93-95 (Materials Science Forum; Vol. 700).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

AU - van Beveren, Laurens H. Willems

AU - Tan, Kuan Y.

AU - Lai, Nai-Shyan

AU - Klochan, Oleh

AU - Dzurak, Andrew S.

AU - Hamilton, Alex R.

N1 - Conference code: 5

PY - 2012

Y1 - 2012

N2 - A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

AB - A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

KW - Hall bar

KW - MOSFET

KW - overlapping-gate

KW - 2DEG

KW - e-beam lithography

KW - Landau levels

KW - EDGE STATES

KW - SI-MOSFETS

KW - QUANTUM

KW - SCATTERING

KW - TRANSPORT

KW - SYSTEM

U2 - 10.4028/www.scientific.net/MSF.700.93

DO - 10.4028/www.scientific.net/MSF.700.93

M3 - Conference article in proceedings

T3 - Materials Science Forum

SP - 93

EP - 95

BT - ADVANCED MATERIALS AND NANOTECHNOLOGY

A2 - Ruck, BJ

A2 - Kemmitt, T

PB - Trans Tech Publications

T2 - Conference on Advanced Materials and Nanotechnology

Y2 - 7 February 2011 through 11 February 2011

ER -

van Beveren LHW, Tan KY, Lai NS, Klochan O, Dzurak AS, Hamilton AR. Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime. In Ruck BJ, Kemmitt T, editors, ADVANCED MATERIALS AND NANOTECHNOLOGY. Trans Tech Publications. 2012. p. 93-95. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.700.93

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this