Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H. Willems van Beveren*, Kuan Y. Tan, Nai-Shyan Lai, Oleh Klochan, Andrew S. Dzurak, Alex R. Hamilton

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

Original languageEnglish
Title of host publicationADVANCED MATERIALS AND NANOTECHNOLOGY
EditorsBJ Ruck, T Kemmitt
PublisherTRANS TECH PUBLICATIONS
Pages93-95
Number of pages3
DOIs
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
EventConference on Advanced Materials and Nanotechnology - Wellington, New Zealand
Duration: 7 Feb 201111 Feb 2011
Conference number: 5

Publication series

NameMaterials Science Forum
PublisherTRANS TECH PUBLICATIONS LTD
Volume700
ISSN (Print)0255-5476

Conference

ConferenceConference on Advanced Materials and Nanotechnology
Abbreviated titleAMN
Country/TerritoryNew Zealand
CityWellington
Period07/02/201111/02/2011

Keywords

  • Hall bar
  • MOSFET
  • overlapping-gate
  • 2DEG
  • e-beam lithography
  • Landau levels
  • EDGE STATES
  • SI-MOSFETS
  • QUANTUM
  • SCATTERING
  • TRANSPORT
  • SYSTEM

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