Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

L. H. Willems van Beveren*, K. Y. Tan, N. S. Lai, A. S. Dzurak, A. R. Hamilton

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a high density at the Ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing. (c) 2010 American Institute of Physics. [doi:10.1063/1.3501136]

Original languageEnglish
Article number152102
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
Publication statusPublished - 11 Oct 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • LOW-TEMPERATURE RESISTIVITY
  • TRANSPORT
  • MOSFETS
  • STATES

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