Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy

Wei Li, M. Pessa, T. Ahlgren, James Dekker

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalApplied Physics Letters
Volume79
Issue number8
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • deep levels, MBE, GaInNAs, substitutional nitrogen

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