Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy

Wei Li; M. Pessa; Tommy Ahlgren; James Dekker

Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy

Wei Li, M. Pessa, Tommy Ahlgren, James Dekker

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Journal	Applied Physics Letters
Volume	79
Issue number	8
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

Keywords

deep levels, MBE, GaInNAs, substitutional nitrogen

Cite this

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title = "Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy",

keywords = "deep levels, MBE, GaInNAs, substitutional nitrogen, deep levels, MBE, GaInNAs, substitutional nitrogen, deep levels, MBE, GaInNAs, substitutional nitrogen",

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year = "2001",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy

AU - Li, Wei

AU - Pessa, M.

AU - Ahlgren, Tommy

AU - Dekker, James

PY - 2001

Y1 - 2001

KW - deep levels, MBE, GaInNAs, substitutional nitrogen

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M3 - Article

SN - 1077-3118

VL - 79

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy

Keywords

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