Origin of nanoscale incipient plasticity in GaAs and InP crystal

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • University of Silesia in Katowice


In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.


Original languageEnglish
Article number651
Issue number12
Publication statusPublished - 1 Dec 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • Dislocation, Incipient plasticity, Nanoindentation, Phase transformation, Semiconductors

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