Origin of nanoscale incipient plasticity in GaAs and InP crystal
Research output: Contribution to journal › Article › Scientific › peer-review
- University of Silesia in Katowice
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.
|Publication status||Published - 1 Dec 2019|
|MoE publication type||A1 Journal article-refereed|
- Dislocation, Incipient plasticity, Nanoindentation, Phase transformation, Semiconductors