Origin of nanoscale incipient plasticity in GaAs and InP crystal

Dariusz Chrobak*, Michał Trębala, Artur Chrobak, Roman Nowak

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

Original languageEnglish
Article number651
JournalCrystals
Volume9
Issue number12
DOIs
Publication statusPublished - 1 Dec 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • Dislocation
  • Incipient plasticity
  • Nanoindentation
  • Phase transformation
  • Semiconductors

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