Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view

Research output: Contribution to journalArticleScientificpeer-review

Standard

Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view. / Virkkala, V.; Havu, V.; Tuomisto, F.; Puska, M.J.

In: Physical Review B, Vol. 88, No. 3, 035204, 07.2013, p. 1-6.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

APA

Vancouver

Author

Bibtex - Download

@article{e1b74158ccd84a118532b65e808ad54a,
title = "Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view",
abstract = "The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.",
keywords = "band gap, GaAs, GaP, semiconductor, band gap, GaAs, GaP, semiconductor, band gap, GaAs, GaP, semiconductor",
author = "V. Virkkala and V. Havu and F. Tuomisto and M.J. Puska",
year = "2013",
month = "7",
doi = "10.1103/PhysRevB.88.035204",
language = "English",
volume = "88",
pages = "1--6",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "3",

}

RIS - Download

TY - JOUR

T1 - Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view

AU - Virkkala, V.

AU - Havu, V.

AU - Tuomisto, F.

AU - Puska, M.J.

PY - 2013/7

Y1 - 2013/7

N2 - The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.

AB - The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.

KW - band gap

KW - GaAs

KW - GaP

KW - semiconductor

KW - band gap

KW - GaAs

KW - GaP

KW - semiconductor

KW - band gap

KW - GaAs

KW - GaP

KW - semiconductor

U2 - 10.1103/PhysRevB.88.035204

DO - 10.1103/PhysRevB.88.035204

M3 - Article

VL - 88

SP - 1

EP - 6

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 3

M1 - 035204

ER -

ID: 829579