Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view

Research output: Contribution to journalArticle

Details

Original languageEnglish
Article number035204
Pages (from-to)1-6
Number of pages6
JournalPHYSICAL REVIEW B
Volume88
Issue number3
StatePublished - Jul 2013
MoE publication typeA1 Journal article-refereed

Researchers

Research units

Abstract

The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.

    Research areas

  • band gap, GaAs, GaP, semiconductor

Download statistics

No data available

ID: 829579