(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Xiaolong Liu; Ramsha Khan; Hannu Pasanen; Harri Ali-Löytty; Ville Vähänissi; Mika Valden; Nikolai V. Tkachenko; Hele Savin

(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Xiaolong Liu^*, Ramsha Khan, Hannu Pasanen, Harri Ali-Löytty, Ville Vähänissi, Mika Valden, Nikolai V. Tkachenko, Hele Savin

^*Corresponding author for this work

Tampere University

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract

Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

Original language	English
Number of pages	2
Publication status	Accepted/In press - 2023
MoE publication type	Not Eligible
Event	Solid State Devices and Materials - Duration: 1 Jan 1958 → …

Conference

Conference	Solid State Devices and Materials
Abbreviated title	SSDM
Period	01/01/1958 → …

1 Active

-: Photonics Research and Innovation
Savin, H., Liu, X. & Radfar, B.
01/09/2022 → 31/12/2026
Project: Academy of Finland: Other research funding

OtaNano
Anna Rissanen (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Päivikki Repo (Manager)
OtaNano
Facility/equipment: Facility

1 Conference presentation

Surface Passivation and Charge Transfer at TiO2/Si Interface
Xiaolong Liu (Speaker), Ramsha Khan (Contributor), Hannu Pasanen (Contributor), Harri Ali-Löytty (Contributor), Ville Vähänissi (Contributor), Mika Valden (Contributor), Nikolai V. Tkachenko (Contributor) & Hele Savin (Contributor)
8 Sept 2023
Activity: Talk or presentation types › Conference presentation

Cite this

@conference{88e8c13130fb478d8cdb5a96962112d1,

title = "(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface",

abstract = "Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects. ",

author = "Xiaolong Liu and Ramsha Khan and Hannu Pasanen and Harri Ali-L{\"o}ytty and Ville V{\"a}h{\"a}nissi and Mika Valden and Tkachenko, {Nikolai V.} and Hele Savin",

year = "2023",

language = "English",

note = "Solid State Devices and Materials, SSDM ; Conference date: 01-01-1958",

}

TY - CONF

T1 - (oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

AU - Liu, Xiaolong

AU - Khan, Ramsha

AU - Pasanen, Hannu

AU - Ali-Löytty, Harri

AU - Vähänissi, Ville

AU - Valden, Mika

AU - Tkachenko, Nikolai V.

AU - Savin, Hele

PY - 2023

Y1 - 2023

N2 - Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

AB - Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

M3 - Abstract

T2 - Solid State Devices and Materials

Y2 - 1 January 1958

ER -

(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Abstract

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Surface Passivation and Charge Transfer at TiO2/Si Interface

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