(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Xiaolong Liu*, Ramsha Khan, Hannu Pasanen, Harri Ali-Löytty, Ville Vähänissi, Mika Valden, Nikolai V. Tkachenko, Hele Savin

*Corresponding author for this work

Research output: Contribution to conferenceAbstractScientificpeer-review


Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.
Original languageEnglish
Number of pages2
Publication statusAccepted/In press - 2023
MoE publication typeNot Eligible
EventSolid State Devices and Materials -
Duration: 1 Jan 1958 → …


ConferenceSolid State Devices and Materials
Abbreviated titleSSDM
Period01/01/1958 → …


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