(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Toni Pasanen; Jennifer Ott; Päivikki Repo; Heli Seppänen; Ville Vähänissi; Hele Savin

(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Toni Pasanen
, Jennifer Ott
, Päivikki Repo
, Heli Seppänen
, Ville Vähänissi
, Hele Savin

Helsinki Institute of Physics

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract

Original language	English
Publication status	Published - 2019
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Seehotel Zeuthen, Zeuthen, Germany Duration: 22 Sept 2019 → 27 Sept 2019 Conference number: 18 https://www.gadest2019.org/index.php

Conference

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Germany
City	Zeuthen
Period	22/09/2019 → 27/09/2019
Internet address	https://www.gadest2019.org/index.php

Keywords

aluminum oxides
charge carrier lifetimes
detectors
float-zone silicon
surface passivation

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Young Scientist Award (GADEST)
Pasanen, T. (Recipient), Savin, H. (Supervising professor) & Vähänissi, V. (Advisor), 27 Sept 2019
Prize: Award or honor granted for a specific work

Passivation of detector-grade Fz-Si with atomic layer deposited aluminium oxide
Pasanen, T. (Speaker), Ott, J. (Contributor), Repo, P. (Contributor), Seppänen, H. (Contributor), Vähänissi, V. (Contributor) & Savin, H. (Contributor)
23 Sept 2019
Activity: Talk or presentation types › Conference presentation

Cite this

@conference{407f9ae420fa4acfa0f526041bbff83b,

title = "(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide",

keywords = "aluminum oxides, charge carrier lifetimes, detectors, float-zone silicon, surface passivation",

author = "Toni Pasanen and Jennifer Ott and P{\"a}ivikki Repo and Heli Sepp{\"a}nen and Ville V{\"a}h{\"a}nissi and Hele Savin",

year = "2019",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology , GADEST ; Conference date: 22-09-2019 Through 27-09-2019",

url = "https://www.gadest2019.org/index.php",

}

TY - CONF

T1 - (oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

AU - Pasanen, Toni

AU - Ott, Jennifer

AU - Repo, Päivikki

AU - Seppänen, Heli

AU - Vähänissi, Ville

AU - Savin, Hele

N1 - Conference code: 18

PY - 2019

Y1 - 2019

KW - aluminum oxides

KW - charge carrier lifetimes

KW - detectors

KW - float-zone silicon

KW - surface passivation

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 22 September 2019 through 27 September 2019

ER -

(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Abstract

Conference

Keywords

Equipment

OtaNano

OtaNano - Nanofab

Prizes

Young Scientist Award (GADEST)

Activities

Passivation of detector-grade Fz-Si with atomic layer deposited aluminium oxide

Cite this