(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Toni Pasanen, Jennifer Ott, Päivikki Repo, Heli Seppänen, Ville Vähänissi, Hele Savin

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract


Original languageEnglish
Publication statusPublished - 2019
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - Seehotel Zeuthen, Zeuthen, Germany
Duration: 22 Sep 2019 → 27 Sep 2019
Conference number: 18
https://www.gadest2019.org/index.php

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated titleGADEST
Country/TerritoryGermany
CityZeuthen
Period22/09/2019 → 27/09/2019
Internet address

Keywords

  • aluminum oxides
  • charge carrier lifetimes
  • detectors
  • float-zone silicon
  • surface passivation

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  • Young Scientist Award (GADEST)

    Pasanen, Toni (Recipient), Savin, Hele (Supervising professor) & Vähänissi, Ville (Advisor), 27 Sep 2019

    Prize: Award or honor granted for a specific work

  • 1 Conference presentation

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