(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Research output: Contribution to conferenceAbstractScientificpeer-review

Abstract


Original languageEnglish
Publication statusPublished - 2019
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - Seehotel Zeuthen, Zeuthen, Germany
Duration: 22 Sept 201927 Sept 2019
Conference number: 18
https://www.gadest2019.org/index.php

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated titleGADEST
Country/TerritoryGermany
CityZeuthen
Period22/09/201927/09/2019
Internet address

Keywords

  • aluminum oxides
  • charge carrier lifetimes
  • detectors
  • float-zone silicon
  • surface passivation

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