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Abstract
Si solar cell cannot absorb photon with energy less than 1.1 eV bandgap. Er2O3, as a solution, absorbs low-energy photons and emits higher-energy photons. Si solar cell also suffers from recombination of photogenerated charge carriers at surface. We study surface passivation property of (i) bare ALD Er2O3 or Er2O3 deposited on top of (ii) SiO2 or (iii) Al2O3 by measuring minority carrier lifetime.
| Original language | English |
|---|---|
| Publication status | Published - 30 May 2024 |
| MoE publication type | Not Eligible |
| Event | Optics & Photonics Days - Helsinki, Finland Duration: 28 May 2024 → 30 May 2024 |
Conference
| Conference | Optics & Photonics Days |
|---|---|
| Abbreviated title | OPD |
| Country/Territory | Finland |
| City | Helsinki |
| Period | 28/05/2024 → 30/05/2024 |
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Dive into the research topics of '(oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation'. Together they form a unique fingerprint.Equipment
Research output
- 1 Article
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Impact of Er-based Atomic Layer Deposited Upconverting Oxides on Si Solar Cell Surface Passivation
Radfar, B., Ghazy, A., Pekkanen, J., Liu, X., Vähänissi, V., Karppinen, M. & Savin, H., 24 Jun 2025, (E-pub ahead of print) In: Physica Status Solidi. A: Applications and Materials Science. 2500023.Research output: Contribution to journal › Article › Scientific › peer-review
Open Access