(oral talk) Efficient surface passivation of black silicon using spatial atomic layer deposition

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2017
MoE publication type	Not Eligible
Event	International Conference on Atomic Layer Deposition - Denver, Colorado, United States Duration: 15 Jul 2017 → 18 Jul 2017 Conference number: 17

Conference	International Conference on Atomic Layer Deposition
Abbreviated title	ALD 2017
Country/Territory	United States
City	Denver, Colorado
Period	15/07/2017 → 18/07/2017

Keywords

This output contributes to the following UN Sustainable Development Goals (SDGs)

@conference{550609a33f894b5a9c95c30e9af78b08,

title = "(oral talk) Efficient surface passivation of black silicon using spatial atomic layer deposition",

keywords = "spatial atomic layer deposition, nanostructured silicon, high surface area, surface passivation, conformal coating, aluminum oxide",

author = "Ismo Heikkinen and P{\"a}ivikki Repo and Ville V{\"a}h{\"a}nissi and Toni Pasanen and Ville Malinen and Hele Savin",

year = "2017",

language = "English",

note = "International Conference on Atomic Layer Deposition, ALD 2017 ; Conference date: 15-07-2017 Through 18-07-2017",

}

TY - CONF

T1 - (oral talk) Efficient surface passivation of black silicon using spatial atomic layer deposition

AU - Heikkinen, Ismo

AU - Repo, Päivikki

AU - Vähänissi, Ville

AU - Pasanen, Toni

AU - Malinen, Ville

AU - Savin, Hele

N1 - Conference code: 17

PY - 2017

Y1 - 2017

KW - spatial atomic layer deposition

KW - nanostructured silicon

KW - high surface area

KW - surface passivation

KW - conformal coating

KW - aluminum oxide

M3 - Abstract

T2 - International Conference on Atomic Layer Deposition

Y2 - 15 July 2017 through 18 July 2017

ER -