(oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Hannu Laine, Alessandro Inglese, Ville Vähänissi, Hele Savin

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2017
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Lopota resort, Georgia, Telavi, Georgia Duration: 1 Oct 2017 → 6 Oct 2017 Conference number: 17

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Georgia
City	Telavi
Period	01/10/2017 → 06/10/2017

Keywords

@conference{726e6336eb5f42149e98dd01e227094b,

title = "(oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation",

keywords = "transition, photodetectors, chemical compounds, doping, heat treatments",

author = "Hannu Laine and Alessandro Inglese and Ville V{\"a}h{\"a}nissi and Hele Savin",

year = "2017",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 01-10-2017 Through 06-10-2017",

}

2017. Abstract from Conference on Gettering and Defect Engineering in Semiconductor Technology, Telavi, Georgia.

Research output: Contribution to conference › Abstract › Scientific › peer-review

TY - CONF

T1 - (oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AU - Laine, Hannu

AU - Inglese, Alessandro

AU - Vähänissi, Ville

AU - Savin, Hele

N1 - Conference code: 17

PY - 2017

Y1 - 2017

KW - transition

KW - photodetectors

KW - chemical compounds

KW - doping

KW - heat treatments

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 1 October 2017 through 6 October 2017

ER -