(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer

Research output: Contribution to conferenceAbstractScientificpeer-review

Original languageEnglish
Publication statusPublished - 2022
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - Mondsee, Austria
Duration: 11 Sept 202217 Sept 2022

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated titleGADEST
Country/TerritoryAustria
CityMondsee
Period11/09/202217/09/2022

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