(oral talk) Characterization of electrically active defects in CZ-Si by photoluminescence imaging

^*Corresponding author for this work

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 12 Sept 2024
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Bad Schandau, Germany Duration: 8 Sept 2024 → 13 Sept 2024 Conference number: 2024

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Germany
City	Bad Schandau
Period	08/09/2024 → 13/09/2024

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

@conference{198db724cf1049e98f361568cb3a831d,

title = "(oral talk) Characterization of electrically active defects in CZ-Si by photoluminescence imaging",

author = "Hele Savin and Katja Mustonen",

year = "2024",

month = sep,

day = "12",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 08-09-2024 Through 13-09-2024",

}