(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Antti Haarahiltunen; Hele Väinölä; M Yli-Koski; Risto Ruotsalainen; E Saarnilehto; S Kaarlela; E Haimi; J. Sinkkonen

(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Antti Haarahiltunen, Hele Väinölä, M Yli-Koski, Risto Ruotsalainen, E Saarnilehto, S Kaarlela, E Haimi, J. Sinkkonen

Department of Electronics and Nanoengineering

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract

In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

Original language	English
Publication status	Published - 2003
MoE publication type	Not Eligible
Event	International Conference on Microscopy of Semiconducting Materials - Cambridge, United Kingdom Duration: 31 Mar 2003 → 4 Apr 2003 Conference number: 13

Conference

Conference	International Conference on Microscopy of Semiconducting Materials
Abbreviated title	MSM
Country/Territory	United Kingdom
City	Cambridge
Period	31/03/2003 → 04/04/2003

Cite this

Haarahiltunen, A., Väinölä, H., Yli-Koski, M., Ruotsalainen, R., Saarnilehto, E., Kaarlela, S., Haimi, E., & Sinkkonen, J. (2003). (oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements. Abstract from International Conference on Microscopy of Semiconducting Materials, Cambridge, United Kingdom.

@conference{a53ffdad71844dbbba21e0fb5657e1b2,

title = "(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements",

abstract = "In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.",

author = "Antti Haarahiltunen and Hele V{\"a}in{\"o}l{\"a} and M Yli-Koski and Risto Ruotsalainen and E Saarnilehto and S Kaarlela and E Haimi and J. Sinkkonen",

year = "2003",

language = "English",

note = "International Conference on Microscopy of Semiconducting Materials, MSM ; Conference date: 31-03-2003 Through 04-04-2003",

}

Haarahiltunen, A, Väinölä, H , Yli-Koski, M, Ruotsalainen, R, Saarnilehto, E, Kaarlela, S, Haimi, E & Sinkkonen, J 2003, '(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements', International Conference on Microscopy of Semiconducting Materials, Cambridge, United Kingdom, 31/03/2003 - 04/04/2003.

(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements. / Haarahiltunen, Antti; Väinölä, Hele ; Yli-Koski, M et al.
2003. Abstract from International Conference on Microscopy of Semiconducting Materials, Cambridge, United Kingdom.

Research output: Contribution to conference › Abstract › Scientific › peer-review

TY - CONF

T1 - (oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

AU - Haarahiltunen, Antti

AU - Väinölä, Hele

AU - Yli-Koski, M

AU - Ruotsalainen, Risto

AU - Saarnilehto, E

AU - Kaarlela, S

AU - Haimi, E

AU - Sinkkonen, J.

N1 - Conference code: 13

PY - 2003

Y1 - 2003

N2 - In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

AB - In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.

M3 - Abstract

T2 - International Conference on Microscopy of Semiconducting Materials

Y2 - 31 March 2003 through 4 April 2003

ER -

(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Abstract

Conference

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