Optically excited THz generation from ordered arrays of GaAs nanowires

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • J. P. Kakko
  • H. Lipsanen

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • RAS - St. Petersburg Academic University


THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.


Original languageEnglish
Title of host publication3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Information Technology and Nanotechnology - Samara, Russian Federation
Duration: 25 Apr 201727 Apr 2017
Conference number: 3

Publication series

NameProcedia Engineering
ISSN (Electronic)1877-7058


ConferenceInternational Conference on Information Technology and Nanotechnology
Abbreviated titleITNT
CountryRussian Federation

    Research areas

  • GaAs, III-V semiconductors, leaky mods, light absorption, MOVPE, nanowires, NWs, Terahertz generation, THz

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